View APTGT750U60D4G_4627258.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT750U60D4G
Single switch Trench + Field Stop IGBT Power Module
1
VCES = 600V IC = 750A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration
3 5 2
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 1000 750 1000 20 2300 1600A@550V Unit V A V W
July, 2008 1-5 APTGT750U60D4G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGT750U60D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE = 15V IC = 800A Tj = 125C VGE = VCE , IC = 13mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 1 1.9 6.5
3100
Unit mA V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=-8/+15V, IC=800A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 800A RG = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 800A RG = 2 VGE = 15V Tj = 150C VBus = 300V IC = 800A Tj = 150C RG = 2 VGE 15V ; VBus = 360V tp = 6s ; Tj = 150C Min Typ 49 3.1 1.5 5.8 250 70 550 70 270 80 650 80 10 mJ 40 4000 A Max Unit nF C
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 800A VR = 300V IF = 800A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 750 1000 800 1.6 1.5 150 250 36 76 9.2 19 2.1 Unit V A A V
July, 2008 2-5 APTGT750U60D4G - Rev 0
ns C mJ
di/dt =5000A/s
www.microsemi.com
APTGT750U60D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 2500 -40 -40 -40 3 1 Min Typ Max 0.065 0.11 175 125 125 5 2 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D4 Package outline (dimensions in mm)
www.microsemi.com
3-5
APTGT750U60D4G - Rev 0
July, 2008
APTGT750U60D4G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1600
TJ = 150C VGE=19V
1600
TJ=25C
1200
IC (A) IC (A)
TJ=150C
1200
VGE=13V VGE=15V
800
800
400
TJ=25C
400
VGE=9V
0 0 0.5 1
0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
1600
Transfert Characteristics 60
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 2 TJ = 150C Eoff
1200 40 800
TJ=125C
E (mJ)
IC (A)
Err
20
Eon TJ=25C
400
TJ=150C
0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 120 100 80 E (mJ) 60 40 20 0 0 2.5 5 7.5 10 Gate Resistance (ohms) 12.5
Eon Err VCE = 300V VGE =15V IC = 800A TJ = 150C Eoff
0 0 200 400 600 IC (A) Reverse Bias Safe Operating Area 2000 800 1000 1200
Eon
1600 IF (A) 1200 800 400 0 0 100 200 300 400 500 600 700 VCE (V)
VGE=15V TJ=150C RG=2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W)
IGBT
0.06 0.9
0.04
0.5 0.3
0.1 0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration in Seconds
www.microsemi.com
4-5
APTGT750U60D4G - Rev 0
0.02
July, 2008
0.7
APTGT750U60D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 50 40 30 20 10 0 200
Hard switching ZVS ZCS VCE=300V D=50% RG=2 TJ=150C
Forward Characteristic of diode 1200 1000 800 IF (A) 600 400 200 0
TJ=25C
Tc=85C
TJ=150C
400
600 IC (A)
800
1000
0
0.4
0.8
1.2 1.6 VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGT750U60D4G - Rev 0
July, 2008

▲Up To Search▲

Price & Availability of APTGT750U60D4G

	To Download APTGT750U60D4G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .